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RFUH10TF6SFHC9 - ROHM Semiconductor

Description: Fast Recovery Diode (AEC-Q101 Qualified)

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RFUH10TF6SFHC9 - ROHM Semiconductor - PCB symbol
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PCB Footprints
RFUH10TF6SFHC9 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220NFM (2PIN
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RFUH10TF6SFHC9 - ROHM Semiconductor - 3D model - Transistor Outline, Vertical - TO-220NFM (2PIN
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RFUH10TF6SFHC9 Details

  • Manufacturer Part Number:

    RFUH10TF6SFHC9

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220NFM, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Application:

    SUPER FAST RECOVERY

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    2.8 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    60 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    10 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.025 µs

  • Reverse Test Voltage:

    600 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RFUH10TF6SFHC9 Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and to keep the input and output traces as short as possible. Additionally, it's recommended to use a common mode choke and a pi-filter to reduce EMI.
  • The RFUH10TF6SFHC9 requires a bias voltage of 3.3V or 5V, and a bias current of 10mA or less. Ensure the bias voltage is stable and noise-free, and that the bias current is limited to prevent overheating.
  • The RFUH10TF6SFHC9 can operate safely between -40°C to 125°C, but the recommended operating temperature range is -20°C to 85°C for optimal performance and reliability.
  • ROHM recommends using ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins to prevent damage from electrostatic discharge. Additionally, handle the device by the body or use an anti-static wrist strap to prevent ESD damage during assembly.
  • Store the RFUH10TF6SFHC9 in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature range is -20°C to 40°C, and the recommended humidity range is 20% to 80% RH.

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RFUH10TF6SFHC9 Overview

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Part Image RFUH10TF6SFH ROHM Semiconductor

Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, TO-220AC