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RFUH20TF6SC9 - ROHM Semiconductor

Description: ROHM 600V 20A, Diode, 2 + Tab-Pin TO-220NFM RFUH20TF6SC9

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PCB Footprints
RFUH20TF6SC9 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220NFM
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3D Models
RFUH20TF6SC9 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-220NFM
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RFUH20TF6SC9 Details

  • Manufacturer Part Number:

    RFUH20TF6SC9

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220NFM, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2017-12-20

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Application:

    SUPER FAST RECOVERY

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    2.8 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    20 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.035 µs

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RFUH20TF6SC9 Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and to keep the signal traces as short as possible. A microstrip or coplanar waveguide layout is recommended for the RF signal path.
  • The RFUH20TF6SC9 requires a bias voltage of 3.3V to 5V, and a bias current of 10mA to 20mA. Ensure the bias circuit is stable and noise-free, and that the bias voltage is applied before the RF signal.
  • The RFUH20TF6SC9 can handle up to 20dBm (100mW) of input power. Exceeding this limit may cause damage to the device or affect its performance.
  • Check the PCB layout, bias circuit, and RF signal path for any issues. Verify the input and output impedance matching, and ensure the device is properly biased. Use a spectrum analyzer or network analyzer to measure the device's performance and identify any issues.
  • The RFUH20TF6SC9 is rated for operation up to 85°C. However, its performance may degrade at higher temperatures. If your application requires operation above 85°C, consider using a different device or taking additional thermal management measures.

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RFUH20TF6SC9 Overview

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