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RHRP8120 - onsemi

Description: Avalanche Energy Rated; Hyperfast recovery Trr = 70ns (@IF= 8A); Max Forward Voltage, VF = 3.2V (@ TC = 25°C); 1200V Reverse Voltage and High Reliability; RoHS compliant

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PCB Footprints
RHRP8120 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - O−220−2LD CASE 340BA ISSUE O_2021
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3D Models
RHRP8120 - onsemi  - 3D model - Transistor Outline, Vertical - O−220−2LD CASE 340BA ISSUE O_2021
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RHRP8120 Details

  • Manufacturer Part Number:

    RHRP8120

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-2

  • Manufacturer Package Code:

    340BA

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FREE WHEELING DIODE, HIGH RELIABILITY, PD-CASE

  • Application:

    HYPERFAST SOFT RECOVERY

  • Breakdown Voltage-Min:

    1200 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    3.2 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    8 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Power Dissipation-Max:

    75 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    100 µA

  • Reverse Recovery Time-Max:

    0.07 µs

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

RHRP8120 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
  • The SOA is typically defined by the device's voltage, current, and power ratings. For the RHRP8120, the SOA is limited by the maximum voltage (Vds) of 100V, maximum current (Id) of 12A, and maximum power dissipation (Pd) of 100W.
  • Handle the device with an ESD wrist strap or mat, and ensure that the PCB has ESD protection components, such as TVS diodes or ESD protection arrays, to prevent damage from static electricity.
  • A gate drive voltage of 10-15V and a current of 1-2A is recommended for optimal switching performance. However, the specific requirements may vary depending on the application and PCB layout.

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RHRP8120 Overview

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Part Image RHRP8120-F102 onsemi

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 1200V V(RRM), Silicon, TO-220AC