Part Image

RQ3G100GNTB - ROHM Semiconductor

Description: Nch 40V 27A Power MOSFET

Download RQ3G100GNTB Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
RQ3G100GNTB - ROHM Semiconductor PCB footprint - Other - Other - HSMT8 (3.3x3.3)_2022
click to zoom
3D Models
RQ3G100GNTB - ROHM Semiconductor  - 3D model - Other - HSMT8 (3.3x3.3)_2022
click to zoom

RQ3G100GNTB Details

  • Manufacturer Part Number:

    RQ3G100GNTB

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HSMT8, 8 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    15.6 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.0183 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RQ3G100GNTB Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the IC, and a 2-layer or 4-layer PCB with a thermal relief pattern is suggested. The datasheet provides a recommended PCB layout, but it's essential to consult with a thermal expert or perform thermal simulations to ensure optimal thermal performance.
  • To ensure stability, it's crucial to follow the recommended output capacitor selection and layout guidelines. A minimum output capacitance of 10uF is recommended, and the capacitor should be placed close to the IC. Additionally, the PCB layout should minimize the loop area of the output capacitor and the IC to reduce noise and ensure stability.
  • Although the datasheet specifies a maximum input voltage of 36V, it's essential to consider the voltage rating of the internal components and the PCB design. As a general rule, it's recommended to derate the input voltage by 10-20% to ensure reliable operation and prevent damage to the IC.
  • The RQ3G100GNTB has built-in overcurrent protection, but it's still essential to add external protection mechanisms, such as fuses or PTC thermistors, to prevent damage from excessive current. Additionally, ensure proper thermal design and heat sinking to prevent overheating.
  • The RQ3G100GNTB is rated for operation up to 125°C, but it's essential to consider the derating curves and thermal design to ensure reliable operation. Consult with a thermal expert or perform thermal simulations to ensure the IC can operate within the specified temperature range.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

RQ3G100GNTB Overview

Use the download button to access the RQ3G100GNTB schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like RQ3G1, or try a keyword search, such as Power Field-Effect Transistors

Parts related to RQ3G100GNTB

Showing 0 results