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RQ6E055BNTCR - ROHM Semiconductor

Description: Nch 30V 5.5A Power MOSFET

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RQ6E055BNTCR - ROHM Semiconductor PCB footprint - Other - Other - RQ6E055BNTCR-2
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3D Models
RQ6E055BNTCR - ROHM Semiconductor  - 3D model - Other - RQ6E055BNTCR-2
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RQ6E055BNTCR Details

  • Manufacturer Part Number:

    RQ6E055BNTCR

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    2.2 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5.5 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, EMBOSSED, 7 INCH

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.25 W

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RQ6E055BNTCR Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area on the bottom layer connected to the thermal pad, and to use thermal vias to dissipate heat. Additionally, keeping the component placement and routing symmetrical can help to reduce thermal gradients.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, ensure good thermal design, and consider using a heat sink or thermal interface material. Additionally, derating the device's power consumption and using a thermal protection circuit can help prevent overheating.
  • The POR timing of the RQ6E055BNTCR can affect the system's startup sequence and reset timing. It's essential to consider the POR timing when designing the system's power-up sequence, reset circuitry, and clock synchronization to ensure proper system initialization and operation.
  • To ensure proper operation, it's crucial to follow the recommended power sequencing and voltage ramp-up requirements. This includes powering up the device's voltage rails in the correct order, controlling the voltage ramp-up rate, and ensuring that the voltage levels are within the recommended operating range.
  • To minimize EMI and ensure EMC compliance, it's essential to follow good PCB design practices, such as using a solid ground plane, minimizing signal loop areas, and using shielding and filtering techniques. Additionally, consider using EMI filters and common-mode chokes to reduce emissions and improve immunity.

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RQ6E055BNTCR Overview

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