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RS1G260MNTB - ROHM Semiconductor

Description: Nch 40V 80A Power MOSFET, VDSS 40V, RDS(on)(Max.) 3.3mΩ, ID ±80A, PD 35W, HSOP8.

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RS1G260MNTB - ROHM Semiconductor - PCB symbol
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RS1G260MNTB - ROHM Semiconductor PCB footprint - Other - Other - RS1G260MNTB
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RS1G260MNTB - ROHM Semiconductor - 3D model - Other - RS1G260MNTB
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RS1G260MNTB Details

  • Manufacturer Part Number:

    RS1G260MNTB

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HSOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    26 A

  • Drain-source On Resistance-Max:

    0.0044 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Pulsed Drain Current-Max (IDM):

    104 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RS1G260MNTB Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal management system to keep the junction temperature below 125°C. Also, follow the recommended derating curves for voltage and current.
  • ROHM recommends a gate drive voltage of 10-15V and a current of 1-2A to ensure fast switching times and low losses. The gate drive circuit should be designed to provide a low impedance path to the gate terminal.
  • Use a TVS diode or a zener diode to clamp the voltage across the device. Implement overcurrent protection using a sense resistor and a comparator or a dedicated overcurrent protection IC. Also, ensure that the device is operated within the recommended voltage and current ratings.
  • Store the devices in their original packaging or in a dry, ESD-protected environment. Avoid exposing the devices to moisture, extreme temperatures, or physical stress. Handle the devices by the body or the pins, avoiding touching the die or the wire bonds.

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RS1G260MNTB Overview

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