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RURD660S9A - onsemi

Description: 600V Reverse Voltage and High Reliability; Ultrafast recovery Trr = 60ns (@ IF= 6A); Max Forward Voltage, VF = 1.5V (@ TC = 25°C); Avalanche Energy Rated; RoHS compliant

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RURD660S9A - onsemi PCB footprint - Other - Other - TO-252-3L **-
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RURD660S9A - onsemi  - 3D model - Other - TO-252-3L **-
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RURD660S9A Details

  • Manufacturer Part Number:

    RURD660S9A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Manufacturer Package Code:

    369AS

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    ULTRA FAST SOFT RECOVERY

  • Breakdown Voltage-Min:

    600 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.2 V

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    60 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    6 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    50 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    100 µA

  • Reverse Recovery Time-Max:

    0.06 µs

  • Reverse Test Voltage:

    600 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RURD660S9A Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. Ensure a minimum of 1 oz copper thickness and a 1-inch square copper pour on the top layer for heat dissipation.
  • Implement a thermal management strategy, such as a heat sink or thermal interface material, to keep the junction temperature below 150°C. Ensure good airflow and avoid thermal hotspots.
  • Use a gate drive circuit with a low impedance output stage and a voltage swing of 10-15V to ensure fast switching times. A gate resistor value of 10-20 ohms is recommended.
  • Implement overvoltage protection using a TVS diode or a zener diode, and overcurrent protection using a fuse or a current sense resistor. Ensure the protection circuitry is designed to respond quickly to fault conditions.
  • Use a star-point grounding scheme, keep high-frequency traces short and away from sensitive nodes, and use shielding or filtering to minimize EMI radiation.

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RURD660S9A Overview

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Part Image RURD660S9A_NL Fairchild Semiconductor Corporation

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-252

Part Image RURD660S9A Intersil Corporation

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-252