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S1337-1010BQ - Hamamatsu

Description: Photo Diode, Silicon, 960 nm, 200 pA, Radial Leaded, -20°C to 60°C, S1337 Series

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S1337-1010BQ - Hamamatsu  - 3D model
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S1337-1010BQ Details

  • Manufacturer Part Number:

    S1337-1010BQ

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Japan

  • HTS Code:

    8541.49.80.00

  • Manufacturer:

    Hamamatsu Photonics

  • Optoelectronic Device Type:

    PN PHOTODIODE

S1337-1010BQ Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the S1337-1010BQ is -20°C to 70°C. However, it's essential to note that the device's performance may degrade at extreme temperatures.
  • Handle the S1337-1010BQ by the ceramic substrate, avoiding direct contact with the photodiode chip or wire bonds. Use an anti-static wrist strap or mat to prevent electrostatic discharge damage.
  • The recommended soldering temperature is 260°C (500°F) for 3 seconds or less. Exceeding this temperature or time may damage the device.
  • While the S1337-1010BQ is not hermetically sealed, it can operate in a humid environment. However, it's essential to take precautions to prevent moisture ingress, such as using a conformal coating or potting the device.
  • The S1337-1010BQ typically operates with a reverse bias voltage between 5-10V. Ensure the bias voltage is stable and within the recommended range to achieve optimal performance.

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S1337-1010BQ Overview

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