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S1GHE - onsemi

Description: RoHS Compliant / Green Mold Compound; Glass Passivated Chip Junction; UL Flammability 94V-0 Classification; Low Profile Package with < 0.75 mm Package Height; High Efficiency; Moisture Sensitivity Level 1 per J−STD−020; NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

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PCB Footprints
S1GHE - onsemi PCB footprint - Other - Other - S1GHE-2
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S1GHE - onsemi  - 3D model - Other - S1GHE-2
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S1GHE Details

  • Manufacturer Part Number:

    S1GHE

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOD-323 EP

  • Manufacturer Package Code:

    477AD

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.19

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.1 V

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    30 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    400 V

  • Reverse Current-Max:

    1 µA

  • Reverse Recovery Time-Max:

    0.782 µs

  • Reverse Test Voltage:

    400 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

S1GHE Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power dissipation at high temperatures.
  • The maximum allowed voltage on the EN pin is 6V. Exceeding this voltage may damage the device.
  • Use a soft-start circuit or a voltage supervisor to ensure a controlled power-up sequence. Also, ensure that the input voltage rises monotonically during power-up.
  • A 10uF to 22uF X5R or X7R ceramic capacitor is recommended. The capacitor should be placed close to the VIN pin and connected to the GND pin.

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S1GHE Overview

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Part Image NRVS1GHE onsemi

Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon