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S25FL064LABMFB011 - Infineon

Description: FLASH - NOR Memory IC 64Mbit SPI - Quad I/O, QPI 108 MHz 8-SOIC, -40°C ~ 105°C

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S25FL064LABMFB011 - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - PG-DSO-8-807_2026
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S25FL064LABMFB011 - Infineon  - 3D model - Small Outline Packages - PG-DSO-8-807_2026
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S25FL064LABMFB011 Details

  • Manufacturer Part Number:

    S25FL064LABMFB011

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Additional Feature:

    IT ALSO HAVE X1 MEMORY WIDTH

  • Alternate Memory Width:

    2

  • Clock Frequency-Max (fCLK):

    108 MHz

  • JESD-30 Code:

    S-PDSO-G8

  • JESD-609 Code:

    e3

  • Length:

    5.28 mm

  • Memory Density:

    67108864 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    8388608 words

  • Number of Words Code:

    8000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    105 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    8MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    3 V

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    2.16 mm

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Width:

    5.28 mm

S25FL064LABMFB011 Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the S25FL064LABMFB011 is 2.7V to 3.6V.
  • The hold pin (HOLD#) should be driven low to pause the current operation and enter a low-power state. It should be driven high to resume the operation.
  • The write protect pin (WP#) is used to prevent accidental writes to the status register and the memory array. When WP# is driven low, the status register and memory array are protected from writes.
  • The device density and organization can be determined by reading the device ID and memory organization information from the memory array.
  • The S25FL064LABMFB011 supports up to 100,000 erase cycles per sector.

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S25FL064LABMFB011 Overview

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