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S25HS01GTFAMHI010 - Infineon

Description: FLASH - NOR Memory IC 1Gbit SPI - Quad I/O, QPI 166 MHz 16-SOIC

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S25HS01GTFAMHI010 - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - 16-Lead SOIC
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S25HS01GTFAMHI010 - Infineon  - 3D model - Small Outline Packages - 16-Lead SOIC
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S25HS01GTFAMHI010 Details

  • Manufacturer Part Number:

    S25HS01GTFAMHI010

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    12

  • Clock Frequency-Max (fCLK):

    166 MHz

  • Data Retention Time-Min:

    25

  • Endurance:

    2560000 Write/Erase Cycles

  • JESD-30 Code:

    R-PDSO-G16

  • JESD-609 Code:

    e3

  • Length:

    10.3 mm

  • Memory Density:

    1073741824 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    16

  • Number of Words:

    134217728 words

  • Number of Words Code:

    128000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    128MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP16,.4

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    1.8 V

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    2.65 mm

  • Serial Bus Type:

    SPI

  • Standby Current-Max:

    0.00051 A

  • Supply Current-Max:

    0.072 mA

  • Supply Voltage-Max (Vsup):

    2 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Type:

    NOR TYPE

  • Width:

    7.5 mm

  • Write Protection:

    HARDWARE

S25HS01GTFAMHI010 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the S25HS01GTFAMHI010 is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device can tolerate a wider temperature range during storage, which is -55°C to 150°C.
  • To ensure reliable data retention in the S25HS01GTFAMHI010, it's crucial to follow the recommended usage and storage guidelines. This includes avoiding exposure to extreme temperatures, humidity, and radiation. Additionally, the device should be powered down correctly, and the VCC supply voltage should be within the specified range during data retention.
  • The S25HS01GTFAMHI010 supports up to 100,000 erase cycles per sector, and up to 10,000 erase cycles per block. It's essential to consider these limitations when designing your application to ensure the device's endurance meets your requirements.
  • When powering up the S25HS01GTFAMHI010, ensure that the VCC supply voltage rises monotonically and reaches the minimum specified voltage (2.7V) before applying any clock or input signals. During power-down, ensure that the VCC supply voltage falls below 2.7V before removing clock or input signals. This helps prevent unwanted device behavior and ensures reliable operation.
  • When using the S25HS01GTFAMHI010 in a high-reliability or safety-critical application, it's essential to follow Infineon's guidelines for functional safety and reliability. This includes implementing error detection and correction mechanisms, using redundant systems, and ensuring compliance with relevant industry standards and regulations.

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