S26HS512TGABHM000 - Infineon

S26HS512TGABHM000 Details

• Manufacturer Part Number:

  S26HS512TGABHM000

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• ECCN Code:

  EAR99

• HTS Code:

  8542.32.00.51

• Factory Lead Time:

  10 Weeks

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  12

• Clock Frequency-Max (fCLK):

  200 MHz

• Data Retention Time-Min:

  25

• Endurance:

  1280000 Write/Erase Cycles

• JESD-30 Code:

  R-PBGA-B24

• Length:

  8 mm

• Memory Density:

  536870912 bit

• Memory IC Type:

  FLASH

• Memory Width:

  8

• Moisture Sensitivity Level:

  3

• Number of Functions:

  1

• Number of Terminals:

  24

• Number of Words:

  67108864 words

• Number of Words Code:

  64000000

• Operating Mode:

  SYNCHRONOUS

• Operating Temperature-Max:

  125 °C

• Operating Temperature-Min:

  -40 °C

• Organization:

  64MX8

• Package Body Material:

  PLASTIC/EPOXY

• Package Code:

  VBGA

• Package Equivalence Code:

  BGA24,5X5,40

• Package Shape:

  RECTANGULAR

• Package Style:

  GRID ARRAY, VERY THIN PROFILE

• Parallel/Serial:

  SERIAL

• Programming Voltage:

  1.8 V

• Screening Level:

  AEC-Q100

• Seated Height-Max:

  1 mm

• Serial Bus Type:

  SPI

• Standby Current-Max:

  0.00065 A

• Supply Current-Max:

  0.173 mA

• Supply Voltage-Max (Vsup):

  2 V

• Supply Voltage-Min (Vsup):

  1.7 V

• Supply Voltage-Nom (Vsup):

  1.8 V

• Surface Mount:

  YES

• Technology:

  CMOS

• Terminal Form:

  BALL

• Terminal Pitch:

  1 mm

• Terminal Position:

  BOTTOM

• Type:

  NOR TYPE

• Width:

  6 mm