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S34ML01G200BHI000 - SkyHigh Memory

Description: NAND Flash 1Gb, 3V, 25ns NAND Flash

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PCB Footprints
S34ML01G200BHI000 - SkyHigh Memory PCB footprint - BGA - BGA - 63-Ball,
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3D Models
S34ML01G200BHI000 - SkyHigh Memory  - 3D model - BGA - 63-Ball,
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S34ML01G200BHI000 Details

  • Manufacturer Part Number:

    S34ML01G200BHI000

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    BGA-63

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    SkyHigh Memory Limited

  • YTEOL:

    0

  • Access Time-Max:

    25 ns

  • Command User Interface:

    YES

  • Data Polling:

    YES

  • Data Retention Time-Min:

    10

  • JESD-30 Code:

    R-PBGA-B63

  • JESD-609 Code:

    e1

  • Length:

    11 mm

  • Memory Density:

    1073741824 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Sectors/Size:

    1024

  • Number of Terminals:

    63

  • Number of Words:

    134217728 words

  • Number of Words Code:

    128000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    128MX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VFBGA

  • Package Equivalence Code:

    BGA63,10X12,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Page Size:

    2K words

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    3 V

  • Ready/Busy:

    YES

  • Seated Height-Max:

    1 mm

  • Sector Size:

    128K

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.03 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Toggle Bit:

    YES

  • Type:

    SLC NAND TYPE

  • Width:

    9 mm

  • Write Cycle Time-Max (tWC):

    0.000025 ms

S34ML01G200BHI000 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the S34ML01G200BHI000 is 0°C to 85°C, with a storage temperature range of -40°C to 100°C.
  • To ensure signal integrity and reduce noise on the memory bus, use a low-impedance PCB design, add decoupling capacitors near the memory module, and use a clock signal with a stable frequency and amplitude.
  • The recommended refresh rate for the S34ML01G200BHI000 is 4,096 refreshes per second, with a refresh interval of 7.8 microseconds.
  • The S34ML01G200BHI000 is designed to operate at a voltage supply of 1.2V, but it can tolerate a voltage range of 1.17V to 1.27V. However, using a different voltage supply may affect the module's performance and reliability.
  • The S34ML01G200BHI000 supports ECC (Error-Correcting Code) and parity checking to detect and correct errors during memory access. Implement a robust error-handling mechanism in your system design to handle exceptions and errors.

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