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S3GB - onsemi

Description: UL Flammability 94V-0 Classification; MSL 1 per J-STD-020; Low Forward Voltage: 1.15 V Maximum; High Surge Current Capacity; Glass Passivated Chip Junction; RoHS Compliant / Green Molding Compound; NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

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PCB Footprints
S3GB - onsemi PCB footprint - Diodes Moulded - Diodes Moulded - DO-214AA
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3D Models
S3GB - onsemi  - 3D model - Diodes Moulded - DO-214AA
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S3GB Details

  • Manufacturer Part Number:

    S3GB

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SMB

  • Manufacturer Package Code:

    403AF

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.45

  • Application:

    GENERAL PURPOSE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.15 V

  • JEDEC-95 Code:

    DO-214AA

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    80 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    3 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    400 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    1.5 µs

  • Reverse Test Voltage:

    400 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

S3GB Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for S3GB is 1.14V to 1.26V, with a typical voltage of 1.2V.
  • The power-up sequence for S3GB should be VDDIO first, followed by VDD, and then VREF. This ensures proper device operation and prevents latch-up.
  • The maximum clock frequency supported by S3GB is 100 MHz, but it can be overclocked up to 133 MHz with reduced voltage and temperature.
  • A reliable reset mechanism for S3GB can be implemented using a power-on reset (POR) circuit, which ensures that the device is properly reset during power-up.
  • Key considerations for PCB layout and design when using S3GB include minimizing signal trace length, using a solid ground plane, and placing decoupling capacitors close to the device.

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S3GB Overview

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Part Image S3GB Fairchild Semiconductor Corporation

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AA