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S80KS2562GABHI020 - Infineon

Description: PSRAM (Pseudo SRAM) Memory IC 256Mbit HyperBus 200 MHz 35 ns 24-FBGA (6x8)

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S80KS2562GABHI020 - Infineon PCB footprint - BGA - BGA - (VAA024)
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S80KS2562GABHI020 - Infineon  - 3D model - BGA - (VAA024)
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S80KS2562GABHI020 Details

  • Manufacturer Part Number:

    S80KS2562GABHI020

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    3A991.b.2.a

  • HTS Code:

    8542.32.00.41

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    8

  • Access Time-Max:

    35 ns

  • Clock Frequency-Max (fCLK):

    200 MHz

  • I/O Type:

    COMMON

  • JESD-30 Code:

    R-PBGA-B24

  • JESD-609 Code:

    e1

  • Length:

    8 mm

  • Memory Density:

    268435456 bit

  • Memory IC Type:

    PSEUDO STATIC RAM

  • Memory Width:

    16

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    24

  • Number of Words:

    16777216 words

  • Number of Words Code:

    16000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    16MX16

  • Output Characteristics:

    3-STATE

  • Output Enable:

    NO

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VBGA

  • Package Equivalence Code:

    BGA24,5X5,40

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    260

  • Seated Height-Max:

    1 mm

  • Standby Current-Max:

    0.000012 A

  • Standby Voltage-Min:

    1.7 V

  • Supply Current-Max:

    0.022 mA

  • Supply Voltage-Max (Vsup):

    2 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    6 mm

S80KS2562GABHI020 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout guide for the S80KS2562GABHI020 in their application note AN2014-01. It suggests using a 4-layer PCB with a thermal via array under the package to improve heat dissipation.
  • To ensure reliable operation in high-temperature environments, it's essential to follow Infineon's guidelines for thermal management, including using a heat sink, thermal interface material, and ensuring good airflow. Additionally, consider using a thermistor or temperature sensor to monitor the device temperature.
  • According to Infineon's datasheet, the recommended decoupling capacitors for the S80KS2562GABHI020 are 100nF to 1uF, with a voltage rating of 2.5V to 3.3V. The capacitors should be placed as close as possible to the device pins, and multiple capacitors can be used in parallel to reduce ESL and ESR.
  • Infineon recommends a specific power-up and power-down sequence for the S80KS2562GABHI020 to prevent latch-up and ensure reliable operation. The sequence involves ramping up the power supply voltage, followed by the enable signal, and then the clock signal. The reverse sequence should be followed during power-down.
  • The S80KS2562GABHI020 is not specifically designed for radiation-hardened applications. However, Infineon provides some guidance on radiation effects in their datasheet. Engineers should consult with Infineon's radiation experts and follow industry standards for radiation-hardened design to ensure the device meets the required radiation tolerance.

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