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SCT060HU75G3AG - STMicroelectronics

Description: Automotive-grade silicon carbide Power MOSFET 750 V, 58 mOhm typ., 30 A in an HU3PAK package

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SCT060HU75G3AG - STMicroelectronics PCB footprint - Other - Other - SCT060HU75G3AG-1
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SCT060HU75G3AG Details

  • Manufacturer Part Number:

    SCT060HU75G3AG

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Japan

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    40 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    750 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9 pF

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    185 W

  • Pulsed Drain Current-Max (IDM):

    132 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCT060HU75G3AG Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in their application note AN5046, which includes guidelines for thermal pad connection, copper thickness, and via placement to ensure optimal thermal performance.
  • You can calculate the junction temperature (Tj) using the formula: Tj = Tc + (Rthjc * Pd), where Tc is the case temperature, Rthjc is the junction-to-case thermal resistance, and Pd is the power dissipation. The thermal resistance values can be found in the datasheet.
  • The maximum allowed voltage for the SCT060HU75G3AG is 75V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • To ensure proper biasing, follow the recommended biasing scheme in the datasheet, which includes setting the gate-source voltage (Vgs) and drain-source voltage (Vds) within the specified ranges. Additionally, ensure the device is operated within the recommended operating conditions.
  • The recommended gate resistor value depends on the specific application and switching frequency. A general guideline is to use a gate resistor in the range of 10Ω to 100Ω. However, it's recommended to consult the datasheet and application notes for more specific guidance.

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SCT060HU75G3AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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