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SCT2H12NZGC11 - ROHM Semiconductor

Description: ROHM - SCT2H12NZGC11 - MOSFET, N-CH, 1.7KV, 3.7A, TO-3PFM

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SCT2H12NZGC11 - ROHM Semiconductor - PCB symbol
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PCB Footprints
SCT2H12NZGC11 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3PFM
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3D Models
SCT2H12NZGC11 - ROHM Semiconductor - 3D model - Transistor Outline, Vertical - TO-3PFM
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SCT2H12NZGC11 Details

  • Manufacturer Part Number:

    SCT2H12NZGC11

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, TO-3PFM, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    27 Weeks

  • Date Of Intro:

    2016-02-23

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.2

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1700 V

  • Drain Current-Max (ID):

    3.7 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    9.2 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCT2H12NZGC11 Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The device requires a stable input voltage (VIN) and a bypass capacitor (CBYP) to ensure proper biasing. A 10uF ceramic capacitor is recommended for CBYP.
  • The maximum power dissipation (PD) is 2.5W. Exceeding this limit may cause the device to overheat and reduce its lifespan.
  • The device is rated for operation up to 125°C (TJ). However, derating is required for temperatures above 85°C to ensure reliable operation.
  • Handle the device with an ESD wrist strap or mat, and ensure the PCB has ESD protection circuits, such as TVS diodes, to prevent damage.

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SCT2H12NZGC11 Overview

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SCT2H12NZGC11 Alternates

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Part Image SCT2H12NZ ROHM Semiconductor

Power Field-Effect Transistor, 3.7A I(D), 1700V, 1.5ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET