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SCT4013DEC11 - ROHM Semiconductor

Description: MOSFET SiC Mosfet, 750V, 105A, 3-pin THD, Trench-structure

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SCT4013DEC11 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247N_2021
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SCT4013DEC11 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-247N_2021
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SCT4013DEC11 Details

  • Manufacturer Part Number:

    SCT4013DEC11

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    27 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    8

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    750 V

  • Drain Current-Max (ID):

    105 A

  • Drain-source On Resistance-Max:

    0.0169 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    312 W

  • Pulsed Drain Current-Max (IDM):

    233 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCT4013DEC11 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for SCT4013DEC11 is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range for extended periods.
  • To ensure proper biasing, follow the recommended voltage and current conditions specified in the datasheet. Typically, this includes applying a voltage supply (VCC) within the recommended range (e.g., 3.3V or 5V) and ensuring the input voltage (VIN) is within the specified range. Additionally, consider the device's power consumption and thermal management to prevent overheating.
  • The maximum allowable power dissipation for SCT4013DEC11 is typically specified in the datasheet as Pd (Power Dissipation). For this device, the maximum Pd is around 500mW. Exceeding this limit can lead to device failure or reduced lifespan. Ensure proper thermal management, such as using a heat sink or reducing the operating temperature, to stay within the recommended power dissipation limits.
  • To prevent Electrostatic Discharge (ESD) damage, follow proper handling and storage procedures. Use an ESD wrist strap or mat, and ensure the workspace is ESD-protected. When handling the device, avoid touching the pins or exposed pads, and use an anti-static bag or container for storage. ROHM Semiconductor also recommends using ESD protection devices, such as TVS diodes, in the circuit design.
  • For optimal performance and reliability, follow these PCB layout and design considerations: keep the device away from high-current or high-voltage traces, use a solid ground plane, and minimize signal trace lengths. Ensure proper decoupling capacitors are placed near the device, and consider using a thermal pad or heat sink for heat dissipation. Consult the datasheet and ROHM Semiconductor's application notes for more detailed guidelines.

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