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SCTL35N65G2V - STMicroelectronics

Description: Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 40 A in a PowerFLAT 8x8 HV package

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SCTL35N65G2V - STMicroelectronics PCB footprint - Other - Other - SCTL35N65G2V-3
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SCTL35N65G2V - STMicroelectronics  - 3D model - Other - SCTL35N65G2V-3
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SCTL35N65G2V Details

  • Manufacturer Part Number:

    SCTL35N65G2V

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    45 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.8

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.067 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JESD-30 Code:

    S-PSSO-N4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    417 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCTL35N65G2V Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the SCTL35N65G2V is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
  • To ensure reliable operation of the SCTL35N65G2V in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow. Additionally, the device's thermal characteristics, such as the junction-to-case thermal resistance (RthJC), should be considered when designing the system.
  • The recommended PCB layout and design considerations for the SCTL35N65G2V include using a multi-layer PCB with a solid ground plane, placing the device close to the heat sink, and using wide traces for power and ground connections. Additionally, it's essential to follow proper decoupling and bypassing techniques to minimize noise and ensure stable operation.
  • The SCTL35N65G2V has built-in ESD protection, but it's still essential to follow proper ESD handling and protection practices during manufacturing, assembly, and testing. This includes using ESD-safe materials, equipment, and procedures, as well as implementing ESD protection devices, such as TVS diodes or ESD arrays, in the system design.
  • The recommended gate drive circuits and techniques for the SCTL35N65G2V include using a dedicated gate driver IC, such as the STMicroelectronics L638xA series, and following proper gate drive design practices, such as using a low-impedance gate drive circuit, minimizing gate-source voltage ringing, and ensuring proper gate-source voltage rating.

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SCTL35N65G2V Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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