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SCTW70N120G2V - STMicroelectronics

Description: Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package

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SCTW70N120G2V - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - HIP247-ren1
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SCTW70N120G2V - STMicroelectronics  - 3D model - Transistor Outline, Vertical - HIP247-ren1
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SCTW70N120G2V Details

  • Manufacturer Part Number:

    SCTW70N120G2V

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    1

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    91 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    28 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    547 W

  • Pulsed Drain Current-Max (IDM):

    274 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCTW70N120G2V Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SCTW70N120G2V is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
  • The recommended gate drive voltage for the SCTW70N120G2V is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the SCTW70N120G2V can be used in a parallel configuration to increase current handling, but it's essential to ensure proper synchronization and thermal management to avoid uneven current sharing.
  • To protect the SCTW70N120G2V, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current sense resistor, to prevent damage from voltage and current surges.

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SCTW70N120G2V Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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