Please enter a minimum 3 letters or numbers
Technical Content
Part Image

SH8K37GZETB - ROHM Semiconductor

Description: 60V Nch+Nch Power MOSFET

Download SH8K37GZETB Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
SH8K37GZETB - ROHM Semiconductor - PCB symbol
click to zoom
PCB Footprints
SH8K37GZETB - ROHM Semiconductor PCB footprint - Small Outline Packages - Small Outline Packages - 8 lead sop
click to zoom
3D Models
SH8K37GZETB - ROHM Semiconductor - 3D model - Small Outline Packages - 8 lead sop
click to zoom

SH8K37GZETB Details

  • Manufacturer Part Number:

    SH8K37GZETB

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Date Of Intro:

    2018-11-20

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    4.7 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    5.5 A

  • Drain-source On Resistance-Max:

    0.066 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SH8K37GZETB Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the IC, and a 2-layer or 4-layer PCB with a solid ground plane is suggested to reduce thermal resistance. A minimum of 2 oz copper thickness is recommended for the thermal pad.
  • The device requires a soft-start power-on sequence to prevent inrush currents. A recommended power-on sequence is: VCC, then EN, then VIN. For power-off, the sequence should be reversed.
  • The maximum allowed voltage on the EN pin is VCC + 0.3V. Exceeding this voltage may damage the device.
  • The device requires a specific power sequencing to prevent damage. The recommended sequence is: VCC, then EN, then VIN. A power sequencing circuit or a dedicated power management IC can be used to ensure proper sequencing.
  • The recommended operating frequency range for the SH8K37GZETB is 100 kHz to 2 MHz. Operating outside this range may affect device performance and stability.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SH8K37GZETB Overview

Use the download button to access the SH8K37GZETB schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SH8K3, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SH8K37GZETB

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

SH8K37GZETB Alternates

Showing results

Image Part Number Model
Part Image UP9971G-S08-T Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 5A I(D), 60V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image SI4946EY-E3 Vishay Intertechnologies

Power Field-Effect Transistor, 4.5A I(D), N-Channel, Metal-oxide Semiconductor FET
Part Image SI4946EY-T1 Vishay Intertechnologies

Power Field-Effect Transistor, 4.5A I(D), N-Channel, Metal-oxide Semiconductor FET
Part Image SI4946EY-E3 Vishay Siliconix

Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image LT4948C-G Lite-On Semiconductor Corporation

Power Field-Effect Transistor, 4.5A I(D), 60V, 0.053ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
For a full list of alternate parts for SH8K37GZETB, check out Findchips.com