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SI1442DH-T1-GE3 - Vishay

Description: Manufacturer: Vishay Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: SMD/SMT Package/Case: SOT-363-6 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 4 A Rds On - Drain-Source Resistance: 20 mOhms Vgs - Gate-Source Voltage: - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 33 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature

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SI1442DH-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI1442DH-T1-GE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC-70 (6-LEADS)
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3D Models
SI1442DH-T1-GE3 - Vishay - 3D model - SOT23 (6-Pin) - SC-70 (6-LEADS)
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SI1442DH-T1-GE3 Details

  • Manufacturer Part Number:

    SI1442DH-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-70, SOT-363, 6 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    305 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.8 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    51 ns

  • Turn-on Time-Max (ton):

    36 ns

SI1442DH-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI1442DH-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure the SI1442DH-T1-GE3 operates within its recommended operating conditions, maintain a voltage supply between 1.8V to 5.5V, and keep the junction temperature (TJ) below 150°C. Also, ensure the device is operated within its specified frequency range.
  • The maximum allowable power dissipation for the SI1442DH-T1-GE3 is 250mW. Exceeding this limit may cause the device to overheat, leading to reduced performance or even failure.
  • To prevent electrostatic discharge (ESD) damage, handle the SI1442DH-T1-GE3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or exposed internal components.
  • Store the SI1442DH-T1-GE3 in a dry, cool place with a temperature range of -40°C to 125°C. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures.

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SI1442DH-T1-GE3 Overview

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