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SI4214DDY-T1-GE3 - Vishay

Description: SI4214DDY-T1-GE3, Dual N-channel MOSFET Transistor 7.5A 30V, 8-Pin SOIC

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SI4214DDY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - 8-Pin Narrow SOIC
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SI4214DDY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - 8-Pin Narrow SOIC
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SI4214DDY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4214DDY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MS-012, SOIC-8

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    5 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8.5 A

  • Drain-source On Resistance-Max:

    0.0195 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    86 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.1 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    59 ns

  • Turn-on Time-Max (ton):

    108 ns

SI4214DDY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4214DDY-T1-GE3 is a standard QFN16 package with a 3x3mm body size and 0.5mm pitch. A recommended land pattern is available in the Vishay Intertechnologies application note AN81142.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the PCB, and ensure good airflow around the device.
  • The maximum allowed voltage on the EN pin of the SI4214DDY-T1-GE3 is 6V. Exceeding this voltage may damage the device.
  • The SI4214DDY-T1-GE3 is rated for operation in a humidity range of 40% to 80% RH. However, it is recommended to follow proper moisture-sensitive device handling and storage procedures to prevent damage.
  • The SI4214DDY-T1-GE3 has an integrated ESD protection circuit, but it is still recommended to follow standard ESD handling procedures when handling the device. Additionally, consider adding external ESD protection devices, such as TVS diodes, to protect the device from external ESD events.

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SI4214DDY-T1-GE3 Overview

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