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SI4412DY - Vishay

Description: MOSFET Transistor, N-Channel, SO

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SI4412DY - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SO8
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SI4412DY - Vishay  - 3D model - Small Outline Packages - SO8
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SI4412DY Details

  • Manufacturer Part Number:

    SI4412DY

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    83 ns

  • Turn-on Time-Max (ton):

    35 ns

SI4412DY Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the package, using a minimum of 2 oz copper, and ensuring good thermal conduction to the surrounding copper areas. Additionally, it's recommended to use a thermal via array under the package to improve heat dissipation.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Ensure proper thermal design, including a heat sink if necessary, and avoid exceeding the maximum power dissipation. Also, consider derating the device's power handling capabilities at higher temperatures.
  • The SI4412DY has an integrated ESD protection circuit, but it's still essential to follow proper ESD handling precautions during assembly and handling. Use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded. Avoid touching the device's pins or exposed internal components.
  • Yes, the SI4412DY is suitable for high-frequency switching applications due to its low RDS(on) and low gate charge. However, it's essential to consider the device's switching characteristics, including the rise and fall times, and ensure that the driver circuitry is capable of providing a fast and clean switching signal.
  • When selecting a gate driver for the SI4412DY, consider the device's gate charge, threshold voltage, and switching frequency. Choose a gate driver that can provide a sufficient current and voltage to ensure fast and reliable switching. Ensure the gate driver is compatible with the device's logic input and can handle the required switching frequency.

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SI4412DY Overview

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Part Image SI4412DYL99Z Fairchild Semiconductor Corporation

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Part Image SI4412DY-T1 Vishay Siliconix

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Part Image SI4412DYS62Z Fairchild Semiconductor Corporation

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Part Image SI4412DYF011 Fairchild Semiconductor Corporation

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