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SI4800BDY-T1-E3 - Vishay

Description: SI4800BDY-T1-E3, N-channel MOSFET Transistor 6.5 A 30 V, 8-Pin SOIC

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SI4800BDY-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI4800BDY-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - 8-Pin Narrow SOIC
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SI4800BDY-T1-E3 - Vishay - 3D model - Small Outline Packages - 8-Pin Narrow SOIC
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SI4800BDY-T1-E3 Details

  • Manufacturer Part Number:

    SI4800BDY-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    MS-012, SOIC-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    11.25 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6.5 A

  • Drain-source On Resistance-Max:

    0.0185 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    6.5 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    75 ns

  • Turn-on Time-Max (ton):

    35 ns

SI4800BDY-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SI4800BDY-T1-E3 can be found in the Vishay Intertechnologies' application note AN81193, which provides guidelines for PCB layout and assembly.
  • The SI4800BDY-T1-E3 has a thermal pad that should be connected to a thermal plane on the PCB to dissipate heat. A thermal interface material (TIM) can be used to improve heat transfer. Additionally, ensure good airflow around the device and consider using a heat sink if necessary.
  • The SI4800BDY-T1-E3 has an operating temperature range of -55°C to 150°C, but the maximum junction temperature (TJ) should not exceed 150°C. Ensure that the device is operated within the recommended temperature range to ensure reliability and performance.
  • To ensure the reliability of the SI4800BDY-T1-E3, follow the recommended storage and handling procedures, and ensure that the device is operated within the recommended operating conditions. Additionally, consider using a radiation-hardened or high-reliability version of the device, if available.
  • The SI4800BDY-T1-E3 has an ESD rating of Human Body Model (HBM) ≥ 2 kV and Charged Device Model (CDM) ≥ 500 V. Handle the device with ESD-protective equipment and follow proper handling and storage procedures to prevent damage.

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SI4800BDY-T1-E3 Overview

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