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SI4922BDY-T1-GE3 - Vishay

Description: MOSFET 30V 8.0A 3.1W 16mohm @ 10V

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SI4922BDY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SO8
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SI4922BDY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - SO8
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SI4922BDY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4922BDY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    11.2 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    135 pF

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -50 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.1 W

  • Pulsed Drain Current-Max (IDM):

    35 A

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Pure Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    183 ns

  • Turn-on Time-Max (ton):

    105 ns

SI4922BDY-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI4922BDY-T1-GE3 should minimize parasitic inductance and capacitance. Keep the input and output traces short and separate, and use a solid ground plane to reduce noise. A 4-layer PCB with a dedicated power plane and a separate ground plane is recommended.
  • To ensure the device operates within the specified junction temperature range (TJ = -40°C to 150°C), provide adequate heat sinking, use a thermal interface material (TIM) if necessary, and avoid excessive power dissipation. Monitor the device's thermal performance and adjust the design accordingly.
  • The recommended input capacitor value is 10uF to 22uF, with an X7R or X5R dielectric type. This capacitor helps to filter out noise and ripple, and ensures stable operation. The capacitor should be placed as close to the device as possible.
  • Yes, the SI4922BDY-T1-GE3 is suitable for high-reliability and automotive applications. It meets the AEC-Q100 qualification standard for automotive-grade devices, and its robust design and manufacturing process ensure high reliability in demanding environments.
  • To troubleshoot issues with the SI4922BDY-T1-GE3, start by verifying the PCB layout and component placement. Check for proper input and output decoupling, and ensure that the device is operated within its specified voltage and current ranges. Use oscilloscopes and other diagnostic tools to identify and isolate the problem.

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SI4922BDY-T1-GE3 Overview

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