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SI4943BDY-T1-E3 - Vishay

Description: Vishay SI4943BDY-T1-E3 P-channel MOSFET Module, 6.3 A, -20 V, 8-Pin SOIC

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SI4943BDY-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI4943BDY-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI4943BDY-T1-E3 - Vishay - 3D model - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI4943BDY-T1-E3 Details

  • Manufacturer Part Number:

    SI4943BDY-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    MS-012, SOIC-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    6.3 A

  • Drain-source On Resistance-Max:

    0.019 Ω

  • FET Technology:

    TRENCH MOSFET

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.1 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    230 ns

  • Turn-on Time-Max (ton):

    32 ns

SI4943BDY-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4943BDY-T1-E3 is a 5-pin SOT23 package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for each pin.
  • To ensure the SI4943BDY-T1-E3 operates within its recommended operating conditions, maintain a supply voltage between 2.7V and 5.5V, and keep the junction temperature (TJ) below 150°C. Also, ensure the device is operated within its specified frequency range.
  • The maximum allowed power dissipation for the SI4943BDY-T1-E3 is 1.4W. However, this value may vary depending on the ambient temperature and the device's thermal resistance. Refer to the datasheet for more information on thermal characteristics.
  • Yes, the SI4943BDY-T1-E3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive grade and is suitable for use in harsh environments.
  • To prevent electrostatic discharge (ESD) damage, handle the SI4943BDY-T1-E3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Also, avoid touching the device's pins or handling it in a way that could generate static electricity.

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SI4943BDY-T1-E3 Overview

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SI4943BDY-T1-E3 Alternates

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Part Image SI4943BDY-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 6.3A I(D), 20V, 0.019ohm, 2-Element, P-Channel, Silicon, Trench Mosfet FET, MS-012AA
Part Image SI4943BDY-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 6.3A I(D), 20V, 0.019ohm, 2-Element, P-Channel, Silicon, Trench Mosfet FET, MS-012AA
Part Image SI4943BDY-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 6.3A I(D), 20V, 0.019ohm, 2-Element, P-Channel, Silicon, Trench Mosfet FET, MS-012AA