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SI4946CDY-T1-GE3 - Vishay

Description: VISHAY - SI4946CDY-T1-GE3 - MOSFET, DUAL N-CH, 60V, SOIC

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SI4946CDY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI4946CDY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI4946CDY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4946CDY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    3.2 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    6.1 A

  • Drain-source On Resistance-Max:

    0.0409 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Pure Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    61 ns

  • Turn-on Time-Max (ton):

    85 ns

SI4946CDY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4946CDY-T1-GE3 is a standard SOIC-8 package with a 1.27mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note AN81193.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. Typically, this includes a supply voltage (VCC) between 4.5V to 5.5V, and a bias current (Ib) of 1mA to 10mA. Additionally, ensure the input voltage (VIN) is within the recommended range of 0.5V to VCC-1.5V.
  • The maximum power dissipation of the SI4946CDY-T1-GE3 is 500mW. However, this value can be affected by the operating conditions, such as ambient temperature and PCB design. It's essential to follow proper thermal management and design guidelines to ensure reliable operation.
  • The SI4946CDY-T1-GE3 is rated for operation up to 125°C. However, the device's performance and reliability may degrade at higher temperatures. It's essential to follow the recommended operating conditions and consider thermal management strategies to ensure reliable operation in high-temperature environments.
  • To prevent electrostatic discharge (ESD) damage, follow proper handling and storage procedures. Use an ESD wrist strap or mat, and ensure the workspace is ESD-protected. When handling the device, avoid touching the pins or leads, and use an anti-static bag or tube for storage.

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SI4946CDY-T1-GE3 Overview

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