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SI5448DU-T1-GE3 - Vishay

Description: Vishay SI5448DU-T1-GE3 N-channel MOSFET, 25 A, 40 V TrenchFET, 8-Pin PowerPAK ChipFET

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SI5448DU-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPak ChipFet Single
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SI5448DU-T1-GE3 - Vishay  - 3D model - Other - PowerPak ChipFet Single
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SI5448DU-T1-GE3 Details

  • Manufacturer Part Number:

    SI5448DU-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Date Of Intro:

    2017-03-22

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    11.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.00775 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    45 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    31 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    86 ns

  • Turn-on Time-Max (ton):

    120 ns

SI5448DU-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI5448DU-T1-GE3 should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout guidelines. Additionally, consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
  • The SI5448DU-T1-GE3 is a sensitive semiconductor device and requires proper ESD protection during handling and assembly. Use anti-static wrist straps, mats, and packaging materials, and follow standard ESD handling procedures to prevent damage.
  • The SI5448DU-T1-GE3 is a commercial-grade device, but Vishay Intertechnologies offers a range of high-reliability and aerospace-grade devices. For high-reliability or aerospace applications, consider using a device specifically designed and qualified for those markets, such as the Vishay's MIL-PRF-19500 or ESCC-qualified devices.
  • Use a soldering iron with a temperature range of 250°C to 260°C, and follow the recommended soldering profile. Ensure the device is properly aligned and seated during assembly, and use a solder paste with a melting point above 217°C to prevent thermal damage.

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