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SI7212DN-T1-E3 - Vishay

Description: MOSFET 30V Vds 12V Vgs PowerPAK 1212-8

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PCB Footprints
SI7212DN-T1-E3 - Vishay PCB footprint - Other - Other - PowerPAK 1212-8 DUAL
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SI7212DN-T1-E3 - Vishay  - 3D model - Other - PowerPAK 1212-8 DUAL
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SI7212DN-T1-E3 Details

  • Manufacturer Part Number:

    SI7212DN-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4.9 A

  • Drain-source On Resistance-Max:

    0.036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.6 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7212DN-T1-E3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI7212DN-T1-E3 should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device. This helps to reduce thermal resistance and ensures efficient heat dissipation.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate airflow, using a heat sink, and ensuring the device is properly mounted and soldered. Additionally, consider derating the device's power handling capabilities according to the ambient temperature.
  • The recommended soldering conditions for the SI7212DN-T1-E3 are: peak temperature of 260°C, soldering time of 10-30 seconds, and a soldering iron temperature of 350°C. It's also essential to follow the recommended soldering profile and use a solder with a melting point above 217°C.
  • To protect the SI7212DN-T1-E3 from ESD, handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and personnel are properly grounded. Additionally, consider using ESD-protection devices or circuits in the system design.
  • The SI7212DN-T1-E3 has a TID radiation tolerance of 100 krad(Si). This means the device can withstand a total ionizing dose of 100 krad(Si) without significant degradation. However, it's essential to consider the specific radiation environment and potential single-event effects (SEEs) when designing systems for high-reliability applications.

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SI7212DN-T1-E3 Overview

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