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SI7234DP-T1-GE3 - Vishay

Description: MOSFET 12V Vds 12V Vgs PowerPAK SO-8

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SI7234DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7234DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    24.8 A

  • Drain-source On Resistance-Max:

    0.005 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    46 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7234DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7234DP-T1-GE3 is a standard SO-8 package with a 1.27mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
  • To ensure reliability in high-temperature applications, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow. Additionally, the device should be operated within its specified temperature range and derating should be applied according to the datasheet.
  • The SI7234DP-T1-GE3 has built-in ESD protection, but it is still recommended to follow standard ESD handling precautions, such as using wrist straps, anti-static mats, and ionizers, to prevent damage during handling and assembly.
  • Yes, the SI7234DP-T1-GE3 is suitable for high-frequency switching applications. However, it is essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's operating frequency is within the device's specified range.
  • The SI7234DP-T1-GE3 should be stored in a dry, cool place, away from direct sunlight and moisture. It is recommended to follow the manufacturer's storage and handling guidelines, and to use anti-static packaging and materials to prevent damage during storage and transportation.

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SI7234DP-T1-GE3 Overview

Use the download button to access the SI7234DP-T1-GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SI723, or try a keyword search, such as Power Field-Effect Transistors

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