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SI7900AEDN-T1-E3 - Vishay

Description: Mosfet Array 2 N-Channel (Dual) Common Drain 20V 6A 1.5W Surface Mount PowerPAK® 1212-8 Dual

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SI7900AEDN-T1-E3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2-3
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SI7900AEDN-T1-E3 - Vishay  - 3D model - Other - PowerPAK® 1212-8 Single_2-3
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SI7900AEDN-T1-E3 Details

  • Manufacturer Part Number:

    SI7900AEDN-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.1 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7900AEDN-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7900AEDN-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5 V and 5.5 V, and the enable pin (EN) to a logic-level signal (0 V or VIN).
  • The SI7900AEDN-T1-E3 has an operating temperature range of -40°C to 125°C, making it suitable for a wide range of industrial and automotive applications.
  • To protect the SI7900AEDN-T1-E3 from ESD damage, use ESD-safe handling and storage procedures, and consider adding ESD protection devices, such as TVS diodes, to the PCB design.
  • The typical quiescent current (IQ) of the SI7900AEDN-T1-E3 is 10 μA, making it suitable for low-power applications.

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SI7900AEDN-T1-E3 Overview

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Part Image SI7900AEDN-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 6A I(D), 20V, 0.026ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET