The recommended PCB footprint for the SI7904BDN-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
To ensure proper biasing, the SI7904BDN-T1-GE3 requires a supply voltage (VCC) between 2.7V and 5.5V, and a bias current (Ib) of 1mA to 10mA. The device should be operated within the recommended operating conditions specified in the datasheet.
The maximum power dissipation of the SI7904BDN-T1-GE3 is 250mW. However, the actual power dissipation depends on the operating conditions, such as supply voltage, bias current, and ambient temperature. It is essential to ensure the device operates within the recommended operating conditions to prevent overheating.
The SI7904BDN-T1-GE3 is a general-purpose N-channel MOSFET, and its frequency response is limited to around 100kHz. For high-frequency applications, a more specialized MOSFET or a different device type may be required.
The safe operating area (SOA) of the SI7904BDN-T1-GE3 is defined by the maximum drain-source voltage (Vds) of 30V, maximum drain current (Id) of 2.5A, and maximum power dissipation of 250mW. Operating the device within the SOA ensures reliable operation and prevents damage.
Trust Checks
This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored
SI7904BDN-T1-GE3 Overview
Use the download button to access the SI7904BDN-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI790,
or try a keyword search, such as Power Field-Effect Transistors
