Part Image

SI9407BDY-T1-GE3 - Vishay

Description: Vishay SI9407BDY-T1-GE3 P-channel MOSFET Transistor, 3.8 A, -60 V, 8-Pin SOIC

Download SI9407BDY-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI9407BDY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SI9407BDY-T1-GE3
click to zoom
3D Models
SI9407BDY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - SI9407BDY-T1-GE3
click to zoom

SI9407BDY-T1-GE3 Details

  • Manufacturer Part Number:

    SI9407BDY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Moisture Sensitivity Level:

    1

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Terminal Finish:

    Matte Tin (Sn)

  • Time@Peak Reflow Temperature-Max (s):

    30

SI9407BDY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI9407BDY-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, consider using a thermal pad or heat sink to dissipate heat, and ensure proper PCB design and layout to minimize thermal resistance.
  • The maximum allowed voltage on the enable pin (EN) of the SI9407BDY-T1-GE3 is 6V. Exceeding this voltage may damage the device or affect its performance.
  • Yes, the SI9407BDY-T1-GE3 is suitable for high-frequency switching applications up to 1MHz. However, it is essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's requirements are within the device's specifications.
  • The power sequencing requirements for the SI9407BDY-T1-GE3 are critical to ensure proper device operation. It is recommended to follow the power-up and power-down sequencing guidelines provided in the datasheet to prevent damage or malfunction.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI9407BDY-T1-GE3 Overview

Use the download button to access the SI9407BDY-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI940, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI9407BDY-T1-GE3

Showing 0 results