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SIB452DK-T1-GE3 - Vishay

Description: Vishay SIB452DK-T1-GE3 N-channel MOSFET Transistor, 0.67 A, 190 V, 6-Pin SC-75

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Symbol
SIB452DK-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SIB452DK-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SC75-6L Single
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3D Models
SIB452DK-T1-GE3 - Vishay - 3D model - Other - PowerPAK® SC75-6L Single
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SIB452DK-T1-GE3 Details

  • Manufacturer Part Number:

    SIB452DK-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-75, POWERPAK, 6 PIN

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    190 V

  • Drain-source On Resistance-Max:

    2.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, 13 INCH

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    13 W

  • Pulsed Drain Current-Max (IDM):

    1.5 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIB452DK-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIB452DK-T1-GE3 can be found in the Vishay Intertechnologies' application note AN10343, which provides a detailed layout and land pattern design guide.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • The maximum allowed voltage transient for the SIB452DK-T1-GE3 is not explicitly stated in the datasheet. However, as a general guideline, it is recommended to limit voltage transients to 10% of the maximum rated voltage to ensure device reliability.
  • Yes, the SIB452DK-T1-GE3 can be used in a parallel configuration to increase current handling. However, it is essential to ensure that the devices are properly matched and that the current sharing is balanced to avoid overheating and reduce reliability.
  • The recommended storage condition for the SIB452DK-T1-GE3 is to store the devices in a dry, cool place with a relative humidity of 50% or less, and to avoid exposing them to temperatures above 30°C (86°F) or below -20°C (-4°F).

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SIB452DK-T1-GE3 Overview

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