The recommended PCB footprint for the SIC476ED-T1-GE3 is a thermal pad with a minimum size of 2.5 mm x 2.5 mm, with a thermal via array underneath to ensure good thermal dissipation.
To ensure reliability in high-temperature applications, it is recommended to follow the recommended derating curves for the device, and to ensure good thermal design and heat sinking to keep the junction temperature below the maximum rated temperature of 175°C.
The maximum allowed voltage transient for the SIC476ED-T1-GE3 is 80 V, with a maximum duration of 100 ms. Exceeding this limit may damage the device.
Yes, the SIC476ED-T1-GE3 can be used in parallel to increase current handling, but it is recommended to ensure that the devices are matched in terms of their electrical characteristics, and that the current sharing is balanced to avoid overheating.
The recommended gate drive voltage for the SIC476ED-T1-GE3 is between 10 V and 15 V, with a maximum gate current of 5 A.
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SIC476ED-T1-GE3 Overview
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