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SIHF9Z24STRR-GE3 - SILICONIX

Description: MOSFET P-CHANNEL 60V

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PCB Footprints
SIHF9Z24STRR-GE3 - SILICONIX PCB footprint - Other - Other - D2PAK (TO-263)
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SIHF9Z24STRR-GE3 Details

  • Manufacturer Part Number:

    SIHF9Z24STRR-GE3

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK

  • Package Description:

    SMALL OUTLINE, R-PSSO-G2

  • Pin Count:

    4

  • Reach Compliance Code:

    Unknown

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Siliconix

  • YTEOL:

    5.4

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    240 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.28 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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SIHF9Z24STRR-GE3 Overview

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Part Image IRF9Z24STRLPBF Vishay Intertechnologies

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRF9Z24SPBF Vishay Siliconix

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF9Z24STRLPBF International Rectifier

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRF9Z24STRR International Rectifier

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF9Z24STRL International Rectifier

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for SIHF9Z24STRR-GE3, check out Findchips.com