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SIHFR9024TR-GE3 - Vishay

Description: P-Channel 60 V 8.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount TO-252AA

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SIHFR9024TR-GE3 - Vishay PCB footprint - Other - Other - SIHFR9024TR-GE3-3
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SIHFR9024TR-GE3 Details

  • Manufacturer Part Number:

    SIHFR9024TR-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Qualification Status:

    Not Qualified

SIHFR9024TR-GE3 Frequently Asked Questions (FAQs)

  • The thermal resistance (RθJA) of the SIHFR9024TR-GE3 is 2.5°C/W, which is not explicitly stated in the datasheet but can be calculated using the package dimensions and thermal conductivity.
  • Yes, the SIHFR9024TR-GE3 is a high-reliability device, suitable for use in demanding applications such as aerospace, defense, and industrial control systems. It meets the requirements of MIL-PRF-19500 and is qualified to JANS (Joint Army-Navy Standard) specifications.
  • To ensure proper soldering, follow the recommended soldering profile and temperature guidelines provided in the datasheet. Additionally, use a solder with a melting point above 217°C (423°F) to prevent damage to the device.
  • The recommended PCB layout for the SIHFR9024TR-GE3 involves using a thermal pad and vias to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended, and the PCB should be designed to minimize thermal resistance.
  • Yes, the SIHFR9024TR-GE3 is suitable for high-frequency applications up to 1 GHz. However, it's essential to consider the device's parasitic capacitance and inductance when designing the circuit to ensure optimal performance.

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SIHFR9024TR-GE3 Overview

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SIHFR9024TR-GE3 Alternates

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Image Part Number Model
Part Image SIHFR9024TR-GE3 Vishay Siliconix

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRFR9024TRLPBF Vishay Siliconix

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRFR9024PBF International Rectifier

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR9024TRL International Rectifier

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR9024TR Vishay Siliconix

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

For a full list of alternate parts for SIHFR9024TR-GE3, check out Findchips.com