Please enter a minimum 3 letters or numbers
Technical Content
Part Image

SIHG039N60EF-GE3 - Vishay

Description: MOSFET EF Series Power MOSFET With Fast Body Diode; 4th Gen E Series Technology

Download SIHG039N60EF-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
SIHG039N60EF-GE3 - Vishay - PCB symbol
click to zoom
PCB Footprints
SIHG039N60EF-GE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO 247 AC
click to zoom
3D Models
SIHG039N60EF-GE3 - Vishay - 3D model - Transistor Outline, Vertical - TO 247 AC
click to zoom

SIHG039N60EF-GE3 Details

  • Manufacturer Part Number:

    SIHG039N60EF-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.22

  • Avalanche Energy Rating (Eas):

    508 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    61 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7 pF

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    357 W

  • Pulsed Drain Current-Max (IDM):

    196 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    345 ns

  • Turn-on Time-Max (ton):

    422 ns

SIHG039N60EF-GE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SIHG039N60EF-GE3 is -40°C to 150°C.
  • Proper thermal management can be achieved by ensuring good heat sink contact, using a thermal interface material, and maintaining a low thermal resistance between the module and heat sink.
  • The recommended gate resistor value for the SIHG039N60EF-GE3 is typically in the range of 10 ohms to 20 ohms, but it may vary depending on the specific application and switching frequency.
  • Yes, the SIHG039N60EF-GE3 can be used in a parallel configuration, but it's essential to ensure that the modules are properly matched, and the gate drive and control circuits are designed to handle the parallel configuration.
  • The maximum allowable voltage transient for the SIHG039N60EF-GE3 is typically around 10% to 15% above the maximum rated voltage, but it's recommended to consult the datasheet and application notes for specific guidance.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SIHG039N60EF-GE3 Overview

Use the download button to access the SIHG039N60EF-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SIHG0, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SIHG039N60EF-GE3

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑