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SIHG068N60EF-GE3 - Vishay

Description: MOSFET 600V N-CHANNEL

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SIHG068N60EF-GE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - SIHG068N60EF-GE3
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SIHG068N60EF-GE3 - Vishay  - 3D model - Transistor Outline, Vertical - SIHG068N60EF-GE3
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SIHG068N60EF-GE3 Details

  • Manufacturer Part Number:

    SIHG068N60EF-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2020-02-16

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.18

  • Avalanche Energy Rating (Eas):

    226 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    41 A

  • Drain-source On Resistance-Max:

    0.068 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7 pF

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    115 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    150 ns

  • Turn-on Time-Max (ton):

    137 ns

SIHG068N60EF-GE3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the SIHG068N60EF-GE3 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling is crucial for the SIHG068N60EF-GE3. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1°C/W. Also, consider using a thermal interface material to fill any gaps between the device and heat sink.
  • The recommended gate resistor value for the SIHG068N60EF-GE3 is between 10 ohms and 100 ohms. A higher value can help reduce EMI, but may also increase switching times. A lower value can improve switching times, but may increase EMI.
  • Yes, the SIHG068N60EF-GE3 can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized. Also, consider the increased current handling and thermal management requirements.
  • The maximum allowable voltage transient for the SIHG068N60EF-GE3 is 10% above the maximum rated voltage (600V). However, it's recommended to limit voltage transients to 5% or less to ensure reliable operation.

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SIHG068N60EF-GE3 Overview

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