SIHG11N80AEF-GE3 - Vishay

SIHG11N80AEF-GE3 Details

• Manufacturer Part Number:

  SIHG11N80AEF-GE3

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• ECCN Code:

  EAR99

• Manufacturer:

  Vishay Intertechnologies

• YTEOL:

  6

• Additional Feature:

  AVALANCHE ENERGY RATED

• Avalanche Energy Rating (Eas):

  88 mJ

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  800 V

• Drain Current-Max (ID):

  8 A

• Drain-source On Resistance-Max:

  0.483 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  0.7 pF

• JEDEC-95 Code:

  TO-247AC

• JESD-30 Code:

  R-PSFM-T3

• Number of Elements:

  1

• Number of Terminals:

  3

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  FLANGE MOUNT

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  78 W

• Pulsed Drain Current-Max (IDM):

  18 A

• Surface Mount:

  NO

• Terminal Form:

  THROUGH-HOLE

• Terminal Position:

  SINGLE

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON

• Turn-off Time-Max (toff):

  110 ns

• Turn-on Time-Max (ton):

  60 ns