Part Image

SIHG20N50C-E3 - Vishay

Description: MOSFET 500V Vds 30V Vgs TO-247AC

Download SIHG20N50C-E3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SIHG20N50C-E3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO247AC
click to zoom
3D Models
SIHG20N50C-E3 - Vishay  - 3D model - Transistor Outline, Vertical - TO247AC
click to zoom

SIHG20N50C-E3 Details

  • Manufacturer Part Number:

    SIHG20N50C-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    361 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.27 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    292 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIHG20N50C-E3 Frequently Asked Questions (FAQs)

  • The maximum allowed power dissipation for the SIHG20N50C-E3 is dependent on the thermal resistance of the module and the ambient temperature. According to the datasheet, the maximum power dissipation is approximately 250W at a case temperature of 25°C.
  • To ensure the reliability of the SIHG20N50C-E3 in high-temperature applications, it is essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the module. Additionally, the module should be operated within the recommended temperature range to prevent thermal overstress.
  • The recommended gate drive voltage for the SIHG20N50C-E3 is between 10V and 20V, with a typical value of 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • Yes, the SIHG20N50C-E3 can be used in parallel to increase current handling capability. However, it is essential to ensure that the modules are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The maximum allowed dv/dt for the SIHG20N50C-E3 is 10kV/μs. Exceeding this value can lead to premature failure of the module.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SIHG20N50C-E3 Overview

Use the download button to access the SIHG20N50C-E3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SIHG2, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SIHG20N50C-E3

Showing 0 results