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SIJA54DP-T1-GE3 - Vishay

Description: N-Channel 40V 60A (Tc) 36.7W (Tc) Surface Mount PowerPAK® SO-8

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SIJA54DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAKSO-8L Single
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SIJA54DP-T1-GE3 - Vishay  - 3D model - Other - PowerPAKSO-8L Single
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SIJA54DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIJA54DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8L, 4 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Date Of Intro:

    2016-07-19

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.00235 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    105 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    36.7 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    66 ns

  • Turn-on Time-Max (ton):

    186 ns

SIJA54DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIJA54DP-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.3mm body size. A recommended land pattern can be found in the Vishay Intertechnologies' application note 'SOT23-6 Land Pattern' (document number 81012).
  • To ensure reliability in high-temperature applications, follow the recommended derating guidelines for the device. The SIJA54DP-T1-GE3 is rated for operation up to 150°C. Derate the power dissipation by 2.5mW/°C above 25°C to prevent thermal runaway. Additionally, ensure proper thermal management, such as using a heat sink or thermal interface material, to keep the junction temperature within the recommended range.
  • The maximum allowed voltage on the enable pin (EN) of the SIJA54DP-T1-GE3 is VCC + 0.3V, which is typically 5.5V for a 5V supply. Exceeding this voltage may cause damage to the device.
  • Yes, the SIJA54DP-T1-GE3 can be used in switching regulator applications. However, ensure that the device is properly bypassed with a capacitor (e.g., 10nF to 100nF) to prevent high-frequency oscillations. Additionally, follow the recommended layout guidelines to minimize parasitic inductance and capacitance.
  • The power dissipation of the SIJA54DP-T1-GE3 can be calculated using the formula: Pd = (VIN - VOUT) x IOUT x Efficiency. Where Pd is the power dissipation, VIN is the input voltage, VOUT is the output voltage, IOUT is the output current, and Efficiency is the device's efficiency (typically around 95%).

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