- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for SISH536DN-T1-GE3
- Part Number SISH536DN-T1-GE3
- Manufacturer Vishay
- Pin Count 11
- Part Category MOSFET (N-Channel)
- Package Category Other
- Footprint Name Other - PowerPAK® 1212-8W
- Released Date Nov 27, 2021
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
SISH536DN-T1-GE3 Details
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Manufacturer Part Number:
SISH536DN-T1-GE3
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Factory Lead Time:
16 Weeks
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Manufacturer:
Vishay Intertechnologies
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YTEOL:
5.3
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Avalanche Energy Rating (Eas):
20 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
30 V
SISH536DN-T1-GE3 Frequently Asked Questions (FAQs)
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The recommended PCB footprint for the SISH536DN-T1-GE3 is a standard TO-263 (D2PAK) footprint with a minimum pad size of 4.5mm x 3.5mm and a thermal pad size of 2.5mm x 2.5mm.
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To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a soldering flux specifically designed for lead-free soldering. Avoid applying excessive heat or pressure, which can damage the device.
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The maximum allowed voltage on the gate pin of the SISH536DN-T1-GE3 is ±20V, with a recommended maximum voltage of 15V to ensure reliable operation and prevent damage to the device.
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Yes, the SISH536DN-T1-GE3 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal management, and PCB layout to ensure reliable operation.
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To calculate the thermal resistance, consider the device's junction-to-case thermal resistance (RθJC), case-to-sink thermal resistance (RθCS), and sink-to-ambient thermal resistance (RθSA). Use the provided thermal resistance values in the datasheet and consult with thermal management experts if necessary.
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SISH536DN-T1-GE3 Overview
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