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SISS02DN-T1-GE3 - Vishay

Description: MOSFET 25V Vds 16V Vgs PowerPAK 1212-8S

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SISS02DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2-3
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3D Models
SISS02DN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® 1212-8 Single_2-3
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SISS02DN-T1-GE3 Details

  • Manufacturer Part Number:

    SISS02DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    206 pF

  • JESD-30 Code:

    S-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    65.7 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    68 ns

  • Turn-on Time-Max (ton):

    74 ns

SISS02DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SISS02DN-T1-GE3 is a rectangle with dimensions 2.5 mm x 1.3 mm, with a 0.5 mm x 0.5 mm pad in the center for the thermal pad.
  • To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder paste with a melting point of 217°C to 221°C. Also, ensure the PCB is clean and free of oxidation.
  • The maximum allowed voltage on the gate-source pin (VGS) of SISS02DN-T1-GE3 is ±20 V, with a recommended operating range of -5 V to +15 V.
  • Yes, the SISS02DN-T1-GE3 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and thermal management to minimize losses and prevent overheating.
  • To calculate the power dissipation, use the formula Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current. Also, consider the thermal resistance (Rth) and junction temperature (Tj) to ensure safe operation.

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