SISS04DN-T1-GE3 footprint, schematic symbol and 3D model by Vishay

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PCB Footprints

SISS04DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2-3

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3D Models

SISS04DN-T1-GE3 - Vishay - 3D model - Other - PowerPAK® 1212-8 Single_2-3

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Datasheet Download Datasheet
Stock & Prices Price & Stock for SISS04DN-T1-GE3
Part Number SISS04DN-T1-GE3
Manufacturer Vishay
Pin Count 8
Part Category MOSFET (P-Channel)
Package Category Other
Footprint Name Other - PowerPAK® 1212-8 Single_2-3
Released Date Nov 13, 2019
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SISS04DN-T1-GE3 Details

Manufacturer Part Number:
SISS04DN-T1-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Active
ECCN Code:
EAR99
Factory Lead Time:
16 Weeks
Date Of Intro:
2017-12-19
Manufacturer:
Vishay Intertechnologies
YTEOL:
5.3
Avalanche Energy Rating (Eas):
45 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
30 V
Drain Current-Max (ID):
80 A
Drain-source On Resistance-Max:
0.0012 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
202 pF
JESD-30 Code:
S-PDSO-N5
Number of Elements:
1
Number of Terminals:
5
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
65.7 W
Pulsed Drain Current-Max (IDM):
300 A
Surface Mount:
YES
Terminal Form:
NO LEAD
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
Turn-off Time-Max (toff):
72 ns
Turn-on Time-Max (ton):
66 ns

SISS04DN-T1-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for SISS04DN-T1-GE3 is a rectangle with dimensions 2.5 mm x 1.3 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
While the SISS04DN-T1-GE3 is rated for operation up to 150°C, it's essential to consider the derating curves and thermal management to ensure reliable operation in high-temperature environments.
To ensure reliability in high-humidity environments, follow proper storage and handling procedures, and consider applying a conformal coating to the device. Additionally, ensure the PCB is designed with moisture-resistant materials and follows proper layout guidelines.
The recommended soldering profile for SISS04DN-T1-GE3 is a peak temperature of 260°C, with a dwell time of 10-30 seconds above 220°C. It's essential to follow the recommended soldering profile to prevent damage to the device.
While the SISS04DN-T1-GE3 is designed to be robust, it's essential to consider the vibration specifications and ensure the device is properly secured to the PCB using a suitable adhesive or mechanical fastening method.

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SISS04DN-T1-GE3 Overview

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SISS04DN-T1-GE3 - Vishay

SISS04DN-T1-GE3 Details

SISS04DN-T1-GE3 Frequently Asked Questions (FAQs)

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SISS04DN-T1-GE3 Overview

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