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SISS05DN-T1-GE3 - Vishay

Description: P-Channel 30 V (D-S) MOSFET PowerPAK 121

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SISS05DN-T1-GE3 Details

  • Manufacturer Part Number:

    SISS05DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    31.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    108 A

  • Drain-source On Resistance-Max:

    0.0058 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    140 pF

  • JESD-30 Code:

    S-PDSO-N5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    65.7 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    116 ns

  • Turn-on Time-Max (ton):

    62 ns

SISS05DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SISS05DN-T1-GE3 is a rectangle with dimensions of 1.6 mm x 0.8 mm, with a 0.5 mm radius corner. The pad spacing is 0.5 mm, and the pad size is 0.8 mm x 0.8 mm.
  • To ensure reliable soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder paste to the PCB pads. Use a soldering technique that minimizes thermal stress on the component.
  • The maximum operating temperature range for SISS05DN-T1-GE3 is -55°C to 150°C. However, it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
  • Yes, SISS05DN-T1-GE3 is designed to withstand high-vibration environments. However, it's essential to ensure proper PCB mounting and secure the component to prevent mechanical stress and damage.
  • To prevent electrostatic discharge (ESD) damage, handle SISS05DN-T1-GE3 components in an ESD-protected environment, use ESD-protective packaging, and follow proper grounding procedures during assembly and testing.

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SISS05DN-T1-GE3 Overview

Use the download button to access the SISS05DN-T1-GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SISS0, or try a keyword search, such as Power Field-Effect Transistors

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