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SISS94DN-T1-GE3 - Vishay

Description: MOSFET N-CHANNEL 200-V(D-S) PowerPAK 1212-8S

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SISS94DN-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SISS94DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 S
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3D Models
SISS94DN-T1-GE3 - Vishay - 3D model - Other - PowerPAK® 1212-8 S
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SISS94DN-T1-GE3 Details

  • Manufacturer Part Number:

    SISS94DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    19.5 A

  • Drain-source On Resistance-Max:

    0.075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JESD-30 Code:

    S-PDSO-N8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    65.8 W

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    54 ns

  • Turn-on Time-Max (ton):

    34 ns

SISS94DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SISS94DN-T1-GE3 is a standard SOT23-6 package with a 1.5mm x 1.5mm pad size, with a 0.5mm thermal pad in the center.
  • To ensure the device operates within the recommended junction temperature range, provide adequate heat sinking, use a thermal interface material, and follow proper PCB design and layout guidelines to minimize thermal resistance.
  • The maximum allowed voltage on the enable pin (EN) of the SISS94DN-T1-GE3 is 6V, which is the maximum rating for the logic input voltage.
  • Yes, the SISS94DN-T1-GE3 is qualified for automotive and high-reliability applications, meeting the requirements of AEC-Q100 and other industry standards.
  • To calculate the power dissipation of the SISS94DN-T1-GE3, use the formula: Pd = (Vin x Iin) + (Vout x Iout), where Vin is the input voltage, Iin is the input current, Vout is the output voltage, and Iout is the output current.

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SISS94DN-T1-GE3 Overview

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