SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
30 V
Drain Current-Max (ID):
30 A
Drain-source On Resistance-Max:
0.00675 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
40 pF
JESD-30 Code:
S-PDSO-N8
Number of Elements:
2
Number of Terminals:
8
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
16.7 W
Pulsed Drain Current-Max (IDM):
100 A
Surface Mount:
YES
Terminal Form:
NO LEAD
Terminal Position:
DUAL
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
Turn-off Time-Max (toff):
70 ns
Turn-on Time-Max (ton):
98 ns
SIZ350DT-T1-GE3 Frequently Asked Questions (FAQs)
The recommended storage temperature range for SIZ350DT-T1-GE3 is -40°C to 125°C, as per Vishay's general guidelines for storage and handling of semiconductor devices.
While the SIZ350DT-T1-GE3 is designed to operate in a wide range of temperatures, it's not recommended for use in high-humidity environments (> 80% RH) without proper protection, such as conformal coating or hermetic sealing, to prevent moisture-related failures.
The maximum allowable voltage derating for the SIZ350DT-T1-GE3 is typically 10% to 15% below the maximum rated voltage, depending on the specific application and operating conditions. Consult Vishay's application notes or contact their support team for more information.
Yes, the SIZ350DT-T1-GE3 is RoHS (Restriction of Hazardous Substances) and REACH (Registration, Evaluation, Authorization, and Restriction of Chemicals) compliant, meeting the European Union's regulations for environmental sustainability and safety.
The typical lead time for SIZ350DT-T1-GE3 production and delivery varies depending on the quantity, packaging, and shipping location. Contact Vishay's sales team or authorized distributors for the most up-to-date lead time information.
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SIZ350DT-T1-GE3 Overview
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