SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
30 V
Drain Current-Max (ID):
20 A
Drain-source On Resistance-Max:
0.0067 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
R-PDSO-N6
JESD-609 Code:
e4
Number of Elements:
2
Number of Terminals:
6
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
90 A
Surface Mount:
YES
Terminal Finish:
NICKEL PALLADIUM GOLD
Terminal Form:
NO LEAD
Terminal Position:
DUAL
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
SIZ980DT-T1-GE3 Frequently Asked Questions (FAQs)
The recommended storage condition for SIZ980DT-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
Handle the SIZ980DT-T1-GE3 by the body, avoiding touching the leads or the glass surface. Use anti-static wrist straps, mats, or floors to prevent electrostatic discharge damage.
The maximum allowable voltage for the SIZ980DT-T1-GE3 is 1000 V, as specified in the datasheet. Exceeding this voltage may cause damage or failure.
The SIZ980DT-T1-GE3 is rated for operation up to 150°C. However, it's essential to consider the derating curves and thermal management to ensure reliable operation in high-temperature applications.
Use a soldering iron with a temperature of 250°C to 270°C, and a solder with a melting point above 180°C. Avoid applying excessive force or bending the leads during soldering.
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SIZ980DT-T1-GE3 Overview
Use the download button to access the SIZ980DT-T1-GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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